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• W2332503381 abstract "The atomic layer deposition of copper metal thin films was achieved using a three precursor sequence entailing Cu(OCHMeCH2NMe2)2, formic acid, and hydrazine. A constant growth rate of 0.47−0.50 Å/cycle was observed at growth temperatures between 100 and 170 °C. The resulting films are high purity and have low resistivities." @default.
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• W2332503381 date "2011-09-27" @default.
• W2332503381 modified "2023-10-03" @default.
• W2332503381 title "Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition" @default.
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• W2332503381 doi "https://doi.org/10.1021/cm202475e" @default.
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