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• W2332834410 abstract "Although methods for harvesting subbandgap solar photons have been demonstrated, present approaches still face substantial challenges. We evaluate carrier escape mechanisms in an InAs/GaAs quantum dot (QD) intermediate band photovoltaic (PV) device using photocurrent measurements under subbandgap illumination. We show that subbandgap photons can generate photocurrent through a two-photon absorption process, but that carrier trapping and retrapping limit the overall photocurrent regardless of whether the dominant carrier escape mechanism is optical, tunneling, or thermal. We introduce a new design for an InAs QD-based nanostructured material that can efficiently upconvert two low-energy photons into one high-energy photon. Efficiency is enhanced by intentionally sacrificing a small amount of photon energy to minimize radiative and nonradiative loss. Upconversion PV devices based on this approach separate the absorption of subbandgap photons from the current-harvesting junction, circumventing the carrier-trapping problems." @default.
• W2332834410 created "2016-06-24" @default.
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• W2332834410 date "2015-01-01" @default.
• W2332834410 modified "2023-10-13" @default.
• W2332834410 title "New Nanostructured Materials for Efficient Photon Upconversion" @default.
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• W2332834410 doi "https://doi.org/10.1109/jphotov.2014.2367865" @default.
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