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• W2332868051 abstract "A procedure that produces sub-nanometrically resolved chemical mappings of MOCVD-grown InGaAs/InAlAs/InP quantum cascade lasers is presented. The chemical mappings reveal that, although the structure is lattice-matched to InP, the InAlAs barriers do not attain the nominal aluminum content—48%—and are, in fact, InGaAlAs quaternaries. This information is used to adjust the aluminum precursor flow and fine-tune the composition of the barriers, resulting in a significant improvement of the fabricated lasers." @default.
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• W2332868051 date "2016-04-05" @default.
• W2332868051 modified "2023-10-01" @default.
• W2332868051 title "Sub-nanometrically resolved chemical mappings of quantum-cascade laser active regions" @default.
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• W2332868051 doi "https://doi.org/10.1088/0268-1242/31/5/055017" @default.
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