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- W2333065233 abstract "Single-event upsets in 1T1R Resistive Random Access Memory (RRAM) structures are experimentally demonstrated by generating current transients in the access transistors of the memory cells. The relationship between the single-event upset threshold of the RRAM and the applied voltage is exponential, which is verified using TPA laser analysis and heavy-ion irradiation. Multiple-Event Upsets (MEUs) also occur, where individual ions incrementally change the RRAM's resistance until their cumulative effect causes an upset. Single-event models are presented that allow direct correlation of the voltage across the RRAM, caused by the ion-generated current transient, and the change in RRAM resistance. The RRAM is vulnerable only in the high resistance state, when a voltage capable of writing to the cell is applied to the bit line. This is approximately 0.5% of the memory element's operation time, leading to relatively low projected upset rates." @default.
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- W2333065233 date "2014-08-01" @default.
- W2333065233 modified "2023-09-30" @default.
- W2333065233 title "Single- and Multiple-Event Induced Upsets in <formula formulatype=inline><tex Notation=TeX>${rm HfO}_2/{rm Hf}$</tex></formula> 1T1R RRAM" @default.
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- W2333065233 doi "https://doi.org/10.1109/tns.2014.2321833" @default.
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