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- W2333758911 abstract "ABSTRACT High-voltage wide bandgap thin-film Si n-i-p solarcells have been made using the hot-wire chemical vapordeposition (HWCVD) technique. The best open-circuitvoltage (V oc ) has exceeded 0.94 V in solar cells usingHWCVD in the entire n-i-p structure. A V oc of 0.97V hasbeen achieved using HWCVD in the n and i layers andplasma-enhanced (PE) CVD for the p layer. The highvoltages are attributed to the wide-gap i layer and animproved p/i interface. The wide-gap i layer is obtained byusing low substrate temperatures and sufficient hydrogendilution during the growth of the i layer to arrive at theamorphous-to-microcrystalline phase transition region.The optical band gap (E 04 ) of the i layer is found to be 1.90eV. These high-voltage cells also exhibit good fill factorsexceeding 0.7 with short-circuit-current densities of 8 to 10mA/cm 2 on bare stainless steel substrates. We have alsocarried out photoluminescence (PL) spectroscopy studiesand found a correlation between V" @default.
- W2333758911 created "2016-06-24" @default.
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- W2333758911 date "2002-01-01" @default.
- W2333758911 modified "2023-09-23" @default.
- W2333758911 title "Wide-Gap Thin Film Si n-i-p Solar Cells Deposited" @default.
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