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• W2333861518 endingPage "121" @default.
• W2333861518 startingPage "117" @default.
• W2333861518 abstract "The DGMOSFET (Double Gate Metal Oxide Semiconductor Field Effect Transistor) is considered as the most promising device in nanometer scale (1, 2, 3). Indeed, it presents an excellent control of the short channel effects (4). We can cite the Drain Induced Barrier Lowering (DIBL), Subthershold current, Subthershold voltage slope (S), lower leakage current (Ioff) and better 'On' Current. However, the gate direct tunnelling current is the major components of leakage currents in DG MOSFET and has been shown to become one mechanism of the degradation of device performances at ultra-thin oxide (around 1.5nm). We present in this paper an analyze and a control of the gate tunnelling leakage current. This analyse is based on an own software which consist to solve self consistly Poisson (1) and Schrodinger (2) equations for undoped (or lightly doped) symmetric double gate (DG) MOSFET. Quantum effects and short channel effects (SCE) due to nanometer sizes, hence are taken into account. This approach allows an accurate analyse of the manometer device. The results show that the current tunnelling does set an ultimate scaling limit." @default.
• W2333861518 created "2016-06-24" @default.
• W2333861518 creator A5025142243 @default.
• W2333861518 creator A5025307282 @default.
• W2333861518 date "2016-01-01" @default.
• W2333861518 modified "2023-10-18" @default.
• W2333861518 title "Analyze of DGMOS Tunneling Current through Nanoscale Gate Oxide" @default.
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• W2333861518 hasPublicationYear "2016" @default.
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