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• W2333983708 abstract "Abstract The thermal interaction kinetics of interfacial Si dangling bond P b defects (Si 3 ≡Si·) in (1 1 1)Si/SiO 2 , including passivation in molecular hydrogen (pictured as P b H formation) and dissociation in vacuum, is readdressed. An initial simple thermal model had concluded simple exponential decay for both processes characterised by single-valued activation energies E f and E d , respectively. The picture, however, is found inadequate. In the first part, the results are reviewed of a previous expanded electron spin resonance (ESR) study of the passivation step, leading to a consistent model for passivation, in which the existence of a significant spread σ E f in E f was exposed. In the present work, the results are presented of a similar study on the dissociation kinetics, providing distinct extension of the data set based on proper ESR defect density probing. Unlike previous conclusion, manifest non-simple exponential decay is exposed, which within the simple thermal model reveals the existence of a distinct spread σ E d in E d . Incorporation of this results in a consistent generalised thermal model, the solid set of data enabling unbiased extraction of the pertinent physical parameters, such as the attempt frequency k d0 =(1.6±0.5)×10 13  s −1 , close to the Si–H bending mode. The spreads in E d and E f are the natural manifestation of the stress-induced non-uniformity in atomic P b morphology. The combination of both studies leads to a consistent unified picture of the P b -(molecular) hydrogen interaction kinetics that matches underlying physical insight, based on the rate limiting reactions P b +H 2 →P b +H and P b H→P b +H. It is evidenced that the model also applies to the interfacial Si dangling bond defects in (1 0 0)Si/SiO 2 ." @default.
• W2333983708 created "2016-06-24" @default.
• W2333983708 creator A5039212753 @default.
• W2333983708 date "1999-12-01" @default.
• W2333983708 modified "2023-09-30" @default.
• W2333983708 title "Electron spin resonance study of the interaction of hydrogen with the (111)Si/SiO2 interface: Pb-hydrogen interaction kinetics" @default.
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• W2333983708 doi "https://doi.org/10.1016/s0921-4526(99)00627-4" @default.
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