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• W2334175520 abstract "The optical properties of a ${mathrm{GaTa}}_{4}{mathrm{Se}}_{8}$ single crystal are investigated under high pressure. At ambient pressure, the optical conductivity exhibits a charge gap of $ensuremath{approx}0.12text{ }text{ }mathrm{eV}$ and a broad midinfrared band at $ensuremath{approx}0.55text{ }text{ }mathrm{eV}$. As pressure is increased, the low energy spectral weight is strongly enhanced and the optical gap is rapidly filled, pointing to an insulator to metal transition around 6 GPa. The overall evolution of the optical conductivity demonstrates that ${mathrm{GaTa}}_{4}{mathrm{Se}}_{8}$ is a Mott insulator which undergoes a bandwidth-controlled Mott metal-insulator transition under pressure, in remarkably good agreement with theory. With the use of our optical data and ab initio band structure calculations, our results were successfully compared to the ($U/D$, $T/D$) phase diagram predicted by dynamical mean field theory for strongly correlated systems." @default.
• W2334175520 created "2016-06-24" @default.
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• W2334175520 date "2013-01-14" @default.
• W2334175520 modified "2023-10-14" @default.
• W2334175520 title "Optical Conductivity Measurements of<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mi>GaTa</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>8</mml:mn></mml:msub></mml:math>Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition" @default.
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• W2334175520 doi "https://doi.org/10.1103/physrevlett.110.037401" @default.
• W2334175520 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/23373949" @default.
• W2334175520 hasPublicationYear "2013" @default.
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