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• W2334657779 abstract "We have studied the pressure-induced structural and electronic transitions of GeS to 49 GPa, using diamond anvil cells, microconfocal Raman spectroscopy, synchrotron angle-resolved x-ray diffraction, and electrical resistance measurements. The results indicate that layered GeS phase I (Pnma) undergoes two structural phase transitions: first to phase II $(P{2}_{1}/m)$ at ensuremath{sim}9 GPa and then to phase III (Cmcm) at ensuremath{sim}32 GPa. These transitions occur sluggishly over large pressure ranges and accompany an increase of the nearest coordination number of Ge and S atoms from three in phase I and II to five in phase III, resulting in an extended network of densely packed layer structures in phase III. We suggest anisotropic compression enhanced shears to be responsible for the transitions. Phase II also undergoes an electronic insulator-metal transition and becomes metallic above 20 GPa, The temperature-dependent resistance change of phase II further indicates a gradual band-gap closing of phase II $(P{2}_{1}/m)$." @default.
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• W2334657779 date "2016-03-15" @default.
• W2334657779 modified "2023-10-14" @default.
• W2334657779 title "Structural transitions and metallization in dense GeS" @default.
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• W2334657779 doi "https://doi.org/10.1103/physrevb.93.104107" @default.
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