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• W2334787536 abstract "We report on the fabrication of highly integrated semipolar {101} GaN micro-pyramid light-emitting diode (LED) arrays on a c-plane sapphire substrate obtained via confined selective area growth (SAG). The cathodoluminescence (CL) revealed that the micro-pyramid arrays were under a severe local strain and potential fluctuations were observed depending on the location of the pyramid facets. The emissive region in the micro-pyramid facets was also found to be different in the monochromatically captured CL images. Furthermore, the electroluminescence (EL) of the micro-pyramid LED arrays had a palpable emissive spectra for high indium composition compared to c-plane LEDs, and optical polarization switching was also observed." @default.
• W2334787536 created "2016-06-24" @default.
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• W2334787536 date "2011-01-01" @default.
• W2334787536 modified "2023-10-16" @default.
• W2334787536 title "Highly Integrated InGaN/GaN Semipolar Micro-Pyramid Light-Emitting Diode Arrays by Confined Selective Area Growth" @default.
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• W2334787536 doi "https://doi.org/10.1149/2.018202esl" @default.
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