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• W2334804620 endingPage "05EB04" @default.
• W2334804620 startingPage "05EB04" @default.
• W2334804620 abstract "The effect of the composition of Ru–AlO thin films on the interfacial adhesion energy of an Ru–AlO thin film deposited by atomic layer deposition (ALD) between Cu and SiO 2 , which is a potential candidate for a Cu direct-plateable diffusion barrier, was evaluated using a four-point bending test. The interfacial adhesion energy increased with increasing AlO x content in the Ru–AlO thin films. The results were quantitatively correlated with the interfacial chemical bonding characteristics analyzed by X-ray photoemission spectroscopy, which showed that the adhesion energy is closely related to the formation of strong Al–O–Si bonds at film/substrate interfaces." @default.
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• W2334804620 date "2012-05-01" @default.
• W2334804620 modified "2023-09-26" @default.
• W2334804620 title "Interfacial Adhesion Energy of Ru–AlO Thin Film Deposited by Atomic Layer Deposition between Cu and SiO$_{2}$: Effect of the Composition of Ru–AlO Thin Film" @default.
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• W2334804620 doi "https://doi.org/10.1143/jjap.51.05eb04" @default.
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