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- W2334805087 abstract "In the light of recent advances in understanding the Auger process, the local electronic structural origins of selected core-valence-valence ($mathrm{XVV}$) Auger line shapes are analyzed for a transition-metal silicide prototype, ${mathrm{V}}_{3}$Si. We report for clean $p(1ifmmodetimeselsetexttimesfi{}1)$-${mathrm{V}}_{3}$Si(100) Auger spectra that include the region of the vanadium ${M}_{2,3}mathrm{VV}$ and ${M}_{1}mathrm{VV}$ and the $mathrm{Si}{L}_{2,3}mathrm{VV}$ transitions. We compare the measured line shapes to spectra we generated based on the muffin-tin local density of states (DOS) calculated self-consistently by Klein et al. Good agreement in both the $mathrm{Si}pp({L}_{2,3}{M}_{2,3}{M}_{2,3})$ and the $mathrm{V}dd({M}_{2,3}{M}_{4,5}{M}_{4,5})$ peak positions between experiment and calculation verified that the final-state hole-hole repulsion for $mathrm{Si} ({U}_{mathrm{pp}})$ and $mathrm{V} ({U}_{mathrm{dd}})$ are both ensuremath{sim}0 eV. Also, the $mathrm{Si}{L}_{2,3}mathrm{VV}$ spectrum resembles that of elemental Si in that the line shape is predominantly a self-fold of the $mathrm{Si}3p$ DOS. However, an unexpected result is that the V spectral region above the ${M}_{2,3}mathrm{VV}$ threshold possesses a broad (ensuremath{sim}30-eV-wide) intense feature that is not amenable to conventional interpretation in terms of the ${M}_{1}mathrm{VV}$ transition or ${M}_{2,3}mathrm{VV}$ double-ionization or plasmon-gain satellites. We attribute this observation to the presence of Fano autoionization emission associated with deexcitation of the resonant $3pensuremath{rightarrow}3d$ transition. Supporting evidence comes from a comparison of our x-ray- and electron-stimulated Auger spectra, and to the line shape of the $3p$ loss spectrum. In addition, oxygen-dosing Auger and x-ray photoelectron spectroscopy experiments (0-20 L) (1 langmuir = 1 L = ${10}^{ensuremath{-}6}$ Torr sec) indicate dramatic $mathrm{Si}{L}_{2,3}mathrm{VV}$ line-shape changes associated with oxidation, similar to that observed previously for ${mathrm{Pd}}_{4}$Si. The initial oxidation rate is ensuremath{sim}${10}^{2}$ faster than that for elemental Si. We hypothesize that the dissociation of ${mathrm{O}}_{2}$ is a rate-determining step in the oxidation of elemental Si, but is rapid at transition-metal sites in the silicides. Atomic oxygen then rapidly spills over to the neighboring silicon sites where oxidation subsequently occurs." @default.
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- W2334805087 date "1983-06-01" @default.
- W2334805087 modified "2023-09-26" @default.
- W2334805087 title "Line-shape analyses ofXVVAuger spectra ofp(1×1)-V3Si(100): Evidence for autoionization emission" @default.
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- W2334805087 doi "https://doi.org/10.1103/physrevb.27.6649" @default.
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