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- W2334809717 abstract "Triple-layer structures of SiO2/Zr nanodots (NDs)/SiO2 for nonvolatile memories have been firstly fabricated at room temperature by using ion beam sputtering deposition (IBSD). High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy demonstrate that Zr NDs self-assembled between the SiO2 layers by IBSD are changed into ZrO2 NDs by annealing. The memory window that is estimated by capacitance-voltage curves increases up to a maximum value of 5.8 V with increasing Zr amount up to 6 monolayers for the annealed samples. The memory window and the charge-loss rate at the programmed state are smaller before annealing, which is explained with reference to double oxide barriers of SiO2 and ZrO2." @default.
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- W2334809717 date "2011-01-01" @default.
- W2334809717 modified "2023-09-27" @default.
- W2334809717 title "Nonvolatile Floating-Gate Memories Using Zr and ZrO2 Nanodots" @default.
- W2334809717 doi "https://doi.org/10.1166/jnn.2011.3136" @default.
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- W2334809717 hasPublicationYear "2011" @default.
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