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- W233485338 abstract "Abstract : Experimental studies and modeling of atomic bonding have been carried out for amorphous covalent alloys and CVD diamond films. The following results have been obtained: (1) Two distinct growth regimes have been found for CVD diamond films: an initial period of rapidly increasing roughness, followed by a slower increase as the diamond film grows further. (2) The difficulty in incorporating more than 10 at 96 N in PECVD a-CxNyHz films is related to plasma etching of the films. (3) Predictions for bonding in low epsilon alloys: Si-O and Si-F bonds are preferred in a-SiO2:F while Si-O, Si-F, and O-H bonds are preferred in a-SiO2:F:H. (4) A procedure has been developed for determining the optical constants and the volume fraction of the non-diamond carbon component of CVD diamond films. (5) Entropy have been found to play a critical role in determining the atomic bonding in diamond like carbon alloys. (6) Phase separation is predicted to occur in a-SixCyGez alloys due to the preference for Si-C and Ge-Ge bonds." @default.
- W233485338 created "2016-06-24" @default.
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- W233485338 date "1998-01-22" @default.
- W233485338 modified "2023-09-24" @default.
- W233485338 title "Studies of Electronic and Optical Materials: A. Interactions of Oxygen with Si-Ge Alloys and B. Deposition of Films for Optical Storage Applications" @default.
- W233485338 doi "https://doi.org/10.21236/ada337285" @default.
- W233485338 hasPublicationYear "1998" @default.
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