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• W2334897881 abstract "This paper presents a fully integrated eight-way power-combining amplifier for 110-134-GHz applications in an advanced 90-nm silicon-germanium HBT technology. The eight-way amplifier is implemented using four-stage common-emitter single-ended power amplifiers (PAs) as building blocks, and reactive λ/4 impedance transformation networks are used for power combining. The single-ended PA breakout has a small-signal gain of 20 dB at 116 GHz, and saturation output power ( Psat) of 12.5-13.8 dBm at 114-130 GHz. The eight-way power-combining PA achieves a small-signal gain of 15 dB at 116 GHz, and Psat of 20-20.8 dBm at 114-126 GHz with a power-added efficiency of 7.6%-6.3%. The eight-way amplifier occupies 4.95 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> (including pads) and consumes a maximum current of 980 mA from a 1.6-V supply. To our knowledge, this is the highest power silicon-based D-band amplifier to date." @default.
• W2334897881 created "2016-06-24" @default.
• W2334897881 creator A5006411685 @default.
• W2334897881 creator A5052610625 @default.
• W2334897881 date "2014-12-01" @default.
• W2334897881 modified "2023-10-05" @default.
• W2334897881 title "A 110–134-GHz SiGe Amplifier With Peak Output Power of 100–120 mW" @default.
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• W2334897881 doi "https://doi.org/10.1109/tmtt.2014.2360679" @default.
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