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• W2335312291 abstract "The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. Neutron irradiation can instigate the formation of quasi-stable defect structures, thereby introducing new energy levels into the bandgap that alter carrier lifetimes and give rise to such phenomena as gain degradation in bipolar junction transistors. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. A kinetic Monte Carlo (KMC) code has been developed to model both thermal and carrier injection annealing of initial defect structures in semiconductor materials. The code is employed to investigate annealing in electron-irradiated, p-type silicon as well as the recovery of base current in silicon transistors bombarded with neutrons at the Los Alamos Neutron Science Center (LANSCE) “Blue Room” facility. The results reveal that KMC calculations agree well with these experiments once adjustments are made, within the appropriate uncertainty bounds, to some of the sensitive defect parameters." @default.
• W2335312291 created "2016-06-24" @default.
• W2335312291 creator A5025495864 @default.
• W2335312291 date "2014-12-01" @default.
• W2335312291 modified "2023-09-26" @default.
• W2335312291 title "Analysis of Radiation Effects in Silicon Using Kinetic Monte Carlo Methods" @default.
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• W2335312291 doi "https://doi.org/10.1109/tns.2014.2368075" @default.
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