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• W2335442144 abstract "Micronanostructured silicon surface is irradiated by femtosecond laser pulses at sulfur hexafluoride atmosphere (S-doped black silicon) and photodiodes are successfully fabricated based on this material. From the scanning electronic microscope and atomic force microscope images, the black silicon layer shows micro-nanocomplex structures (microcones covered with nanoparticles). The optoelectrical properties of n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -p junction are formed between S-doped micro-nanostructured silicon-layer and substrate after thermal annealing. For the n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -p photodiode, current-voltage characteristics at different incident light powers have been investigated. The responsivity for 800-nm wavelength is 0.69 A/W at -5 V reverse bias, which is close to that of the usual commercial Si p-i-n photodiode. The present devices are stable and well reproducible." @default.
• W2335442144 created "2016-06-24" @default.
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• W2335442144 date "2015-08-01" @default.
• W2335442144 modified "2023-10-17" @default.
• W2335442144 title "Femtosecond Laser Direct Writing Assisted Nonequilibriumly Doped Silicon n⁺-p Photodiodes for Light Sensing" @default.
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• W2335442144 doi "https://doi.org/10.1109/jsen.2015.2414953" @default.
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