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• W2335491145 endingPage "1441" @default.
• W2335491145 startingPage "1436" @default.
• W2335491145 abstract "High quality nanometer-thick Gd₂O₃ and Y₂O₃ (rare-earth oxide, R₂O₃) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R₂O₃ epi-layers exhibit remarkable thermal stability at 1100 °C, uniformity, and highly structural perfection. Structural investigation was carried out by in situ reflection high energy electron diffraction (RHEED) and ex-situ X-ray diffraction (XRD) with synchrotron radiation. In the initial stage of epitaxial growth, the R₂O₃ layers have a hexagonal phase with the epitaxial relationship of R₂O₃ (0001)(H)<1120>(H)//GaN(0001)(H)<1120>(H). With the increase in R₂O₃ film thickness, the structure of the R₂O₃ films changes from single domain hexagonal phase to monoclinic phase with six different rotational domains, following the R₂O₃ (201)(M)[020](M)//GaN(0001)(H)<1120>(H) orientational relationship. The structural details and fingerprints of hexagonal and monoclinic phase Gd₂O₃ films have also been examined by using electron energy loss spectroscopy (EELS). Approximate 3-4 nm is the critical thickness for the structural phase transition depending on the composing rare earth element." @default.
• W2335491145 created "2016-06-24" @default.
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• W2335491145 date "2013-02-08" @default.
• W2335491145 modified "2023-09-26" @default.
• W2335491145 title "Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd₂O₃ and Y₂O₃ on GaN" @default.
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• W2335491145 doi "https://doi.org/10.1021/am302881y" @default.
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