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• W2335983334 abstract "In this study I-V characteristic, temperature dependence of resistivity, thermopower, switching and memory effect were investigated for GST225 thin films. Resistivities, ratio of the resistivities of amorphous and crystalline states, activation energies of conductivity, temperature of phase transition, Seebeck coefficient, transition time due to the transformation from OFF to ON states and full recording time were estimated. It was shown that transport mechanism based on the two-channel model has a good correlation with experimental results for Ohmic region of I-V characteristic, while space-charge limited current mechanism for power region." @default.
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• W2335983334 date "2016-01-01" @default.
• W2335983334 modified "2023-10-01" @default.
• W2335983334 title "Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application" @default.
• W2335983334 cites W2012361295 @default.
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• W2335983334 doi "https://doi.org/10.1063/1.4945968" @default.
• W2335983334 hasPublicationYear "2016" @default.
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