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• W2336417746 abstract "Amorphous oxide semiconductors like In-Ga-Zn-O (a-IGZO) have attracted much attention, but shifting threshold voltage and other problems are obstacles to successful applications. The authors' calculations indicate that interstitial oxygen defects in a-IGZO are responsible for the observed instability under positive bias stress. This insight helps clear the way for devices such as transparent, flexible thin-film transistors." @default.
• W2336417746 created "2016-06-24" @default.
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• W2336417746 date "2015-04-16" @default.
• W2336417746 modified "2023-10-07" @default.
• W2336417746 title "Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior" @default.
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• W2336417746 doi "https://doi.org/10.1103/physrevapplied.3.044008" @default.
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