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- W2336507921 abstract "Large-area synthesis is of great demand for the preparation of high-performance transition-metal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS2 devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterize the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS2 thin-films to determine sheet resistance (Rsh), resistivity (ρ), and the activation energy (EA) of on-state current flow. For undoped MoS2, ρ was determined to be 191 Ω.cm at 25°C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS2." @default.
- W2336507921 created "2016-06-24" @default.
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- W2336507921 date "2016-01-01" @default.
- W2336507921 modified "2023-09-24" @default.
- W2336507921 title "Structural and Electrical Investigation of MoS2Thin Films Formed by Thermal Assisted Conversion of Mo Metal" @default.
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- W2336507921 doi "https://doi.org/10.1149/2.0041611jss" @default.
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