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- W2337009271 abstract "Der Wachstumsmechanismus von epitaktischen (001)-, (111)Ga- und (111)As-orientierten GaAs-Schichten wird in situ mit einer kombinierten Apparatur aus Oberflächenanalysator (Ellipsometrie, LEED, RHEED und AES) und VPE-Reaktor (GaAs-AsC13-H2-System) untersucht." @default.
- W2337009271 created "2016-06-24" @default.
- W2337009271 creator A5014076986 @default.
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- W2337009271 date "1979-07-03" @default.
- W2337009271 modified "2023-09-25" @default.
- W2337009271 title "ChemInform Abstract: IN SITU SURFACE ANALYSIS OF THE VAPOR PHASE EPITAXY OF GALLIUM ARSENIDE" @default.
- W2337009271 cites W1986298876 @default.
- W2337009271 doi "https://doi.org/10.1002/chin.197927006" @default.
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