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• W2337434635 abstract "Porous anodic oxide films formed on various metals, especially anodic alumina, have attracted huge attention as a starting material in the fabrication of nano-devices because of the high controllability of porous structures in nanometer scale such as pore size, pore interval, as well as pore depth by changing electrolysis condition in addition to their high regularity of pore arrangement. High specific surface area and high corrosion resistance of anodic oxide layer are also important advantages. In recent years, mechanism of self-ordering of anodic alumina films has been intensely studied. We proposed anodizing under high electric field strength as a key factor for self-ordering of pore arrangement (1). However, only a few reports are found on the mechanism of irregularity or defects formation of anodic oxide films. In the case of anodic films formed on aluminum in chromic acid solution, for example, sever pore blanching appears especially at the higher voltage (2). Anodic alumina films formed in phosphoric acid and Ematal bath also indicates numerous pore branching and caved pores in the cell wall (3, 4) where anodizing conditions such as high formation voltage and relatively low dissolution ability of electrolytes to anodic oxides are used. Impurity elements in metals and alloys also bring defects and irregularity into porous structures. Furthermore, anodic films formed at some specific condition, especially on titanium, yielded tubular structure having interspaces at cell boundaries. All these irregularity should be created only at the barrier layer grown under the anodic field. These irregularity including voids in porous oxide seems to be play an important role at an application for industry both in a positive and negative way. In this paper, we report the specific futures of defects appeared in porous anodic oxides films formed on valve metals and semiconductors and evaluated to get unified formation mechanism of such imperfections to be induced in the oxides grown on various substrates. Figure 1 indicates typical cell structures found in anodic films formed on aluminum in (a) sulfuric acid solution at 25 V and (b) phosphoric acid solution at 80 V. The film formed in former electrolyte indicates a narrow space at each cell boundary. Only a few defects such as void could be observed in this film. In contrast, a black band at the cell boundary, which corresponding to an anion free layer, are shown as well as not a few long voids radiating from pore to triple points of cell boundary and circular voids at the triple points are found in the later oxide film. These defects are all created at the barrier layer by specific reactions other than stable anodic oxide growth. Details and mechanism will be discussed further." @default.
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• W2337434635 date "2012-01-01" @default.
• W2337434635 modified "2023-09-26" @default.
• W2337434635 title "Irregularity and Defects of Porous Anodic Oxide Films Formed on Metals" @default.
• W2337434635 doi "https://doi.org/10.1149/ma2012-02/26/2430" @default.
• W2337434635 hasPublicationYear "2012" @default.
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