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• W2337555001 abstract "Metal-organic vapor phase epitaxy (MOVPE) of tensile-strained GaAs1-yPy layers on GaAs substrates was carried out over the temperature range from 380 to 650◦C. The P content in the GaAs1-yPy epitaxial layers initially decreases with decreasing growth temperature from 550 to 650◦C, while then exhibiting an increase with decreasing growth temperature from 550 to 380◦C. Thermodynamic calculations indicate that P incorporation is far from thermodynamic equilibrium at all growth temperatures. Related surface kinetics for the anion incorporation competition are discussed and it is suggested that the P incorporation is assisted by the increased P surface coverage at low growth temperatures. GaAs1-yPy tensile strained layers with layer thickness exceeding the critical thickness exhibit an early stage of strain relaxation by the formation of cracks rather than misfit dislocations. © The Author(s) 2016. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0181603jss] All rights reserved." @default.
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• W2337555001 date "2016-01-01" @default.
• W2337555001 modified "2023-10-15" @default.
• W2337555001 title "Enhanced Incorporation of P into Tensile-Strained GaAs1-yPyLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures" @default.
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• W2337555001 doi "https://doi.org/10.1149/2.0181603jss" @default.
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