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- W2338897621 abstract "This article discusses the theoretical background of stress induced defect formation in semiconductors, illustrated by typical defect observations during advanced device processing. The role and impact of self-interstitials, vacancies, extrinsic point defects on yield stress, precipitation properties, and defect nucleation is addressed. Attention is also given to the influence of thermal stress, film edges, embedded structures (LOCOS and STI), heteroepitaxy and three-dimensional device structures (FinFET, tunnnelFET). Finally stress characterization and simulation are briefly covered." @default.
- W2338897621 created "2016-06-24" @default.
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- W2338897621 date "2016-01-01" @default.
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- W2338897621 title "Stress-induced Defect Generation" @default.
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- W2338897621 doi "https://doi.org/10.1016/b978-0-12-803581-8.03298-7" @default.
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