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- W2339274414 endingPage "051001" @default.
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- W2339274414 abstract "Abstract High-κ cerium oxide (CeO 2 ) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance–voltage ( C – V ) measurement results, the dielectric constant of the CeO 2 film was 25.2. The C – V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density ( D it ) was calculated to be 5.5 × 10 11 eV −1 cm −2 at 150 °C. A CeO 2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio ( I ON / I OFF ) of 1.14 × 10 9 , and a low gate leakage current density ( J leakage ) of 2.85 × 10 −9 A cm −2 with an improved dynamic ON-resistance ( R ON ), which is about one order of magnitude lower than that of a conventional HEMT." @default.
- W2339274414 created "2016-06-24" @default.
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- W2339274414 date "2016-04-15" @default.
- W2339274414 modified "2023-10-16" @default.
- W2339274414 title "High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices" @default.
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- W2339274414 doi "https://doi.org/10.7567/jjap.55.051001" @default.
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