FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2339330036> ?p ?o ?g. }

• W2339330036 endingPage "799" @default.
• W2339330036 startingPage "796" @default.
• W2339330036 abstract "This paper describes an explicit, continuous and threshold voltage (Vth) based compact model of Independent Double Gate (IDG) MOSFET with undoped channel. This model is derived thanks to Poisson equation resolution. Without any fitting parameter or charge sheet approximation, it provides explicit analytical expressions of drain current considering long and short undoped transistor. Consequently, this is a fully analytical and predictive model allowing the description of planar DG MOSFET (symmetrical, asymmetrical and independent) as well as FinFET structures. The validity of this model is demonstrated by comparison with Atlas simulations. The model was implemented in VerilogA in order to test it and to design circuits. Simulation circuit results of a signal mixer and of an inverter are presented. Introduction: DG MOSFETs are promising devices because they can be scaled to the shortest channel length, particularly IDG MOSFETs because the front and the back gate can be independently driven. They enlarge the circuit design space. That is why a compact model is crucial to take advantage of this new technology. However, explicit IDG MOSFET compact model does not really exist. Indeed, existing models require numerical resolutions or are not valid in all operating modes: [1]-[4]. This article presents a Vth-based model of IDG MOSFET, which could be integrated in standard BSIM model. Then, the model was validated by confrontation with numerical simulations [5] and implemented in VerilogA to design circuits. Circuit simulation results are presented to illustrate its robustness. Vth model: We propose to model an IDG MOSFET, with undoped silicon film. IDG MOSFET is shown on Figure 1. L is the gate length, Tsi is the silicon film (or body) thickness, Tox1 and Tox2 are the front and the back gate oxide thicknesses, respectively. Vg1 and Vg2 are the front and the back gate voltages. Without generality loss, ∆Φm1 (respectively ∆Φm2), the work function difference between the front (respectively back) gate and the intrinsic silicon is supposed zero. To model this device, some assumptions were taken into account: Boltzmann statistics was chosen, the current is the sum of the diffusion and drift currents as in the Pao and Sah model, no quantum effect and no ballistic transport are considered. 1D Poisson equation is solved to derive the drain current Ids. Boundary conditions, electrical neutrality and physical assumptions allow getting explicit Ids. Poisson's equation within the gradual channel approximation is: ( ) ( ) ( )       − = t imref Si i u x y x n q dy y x d φ ψ e ψ , exp . . , 2 2 (1) Ψ(x,y) is the potential in the silicon film, q is the electron charge, ni the intrinsic doping, esi the silicon permittivity. ut is the thermal voltage and Φimref is the quasi Fermi level of electrons in the channel. Boundary conditions are: y Q Q T V s Si g ox g ox s m g ∂ ∂ − = + = ∆ − 1 1 1 1 1 1 1 1 ψ e e ψ φ (2) y Q Q T V s Si g ox g ox s m g ∂ ∂ = + = ∆ − 2 2 2 2 1 2 2 2 ψ e e ψ φ (3) Ψs1 and Ψs2 are the front and the back surface potentials. Qg1 and Qg2 are the front and the back gate charge. eox1 is the front gate oxide permittivity and eox2 is the back one. Electrical neutrality is expressed as: 0 2 1 = + + inv g g Q Q Q (4) Qinv is the inversion charge. 796 NSTI-Nanotech 2006, www.nsti.org, ISBN 0-9767985-8-1 Vol. 3, 2006 After integration of Poisson's equation between both interfaces with Gauss's law, we get:" @default.
• W2339330036 created "2016-06-24" @default.
• W2339330036 creator A5003593677 @default.
• W2339330036 creator A5037091002 @default.
• W2339330036 creator A5044733288 @default.
• W2339330036 creator A5054838625 @default.
• W2339330036 creator A5071808895 @default.
• W2339330036 date "2006-05-07" @default.
• W2339330036 modified "2023-09-24" @default.
• W2339330036 title "Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET" @default.
• W2339330036 hasPublicationYear "2006" @default.
• W2339330036 type Work @default.
• W2339330036 sameAs 2339330036 @default.
• W2339330036 citedByCount "7" @default.
• W2339330036 crossrefType "journal-article" @default.
• W2339330036 hasAuthorship W2339330036A5003593677 @default.
• W2339330036 hasAuthorship W2339330036A5037091002 @default.
• W2339330036 hasAuthorship W2339330036A5044733288 @default.
• W2339330036 hasAuthorship W2339330036A5054838625 @default.
• W2339330036 hasAuthorship W2339330036A5071808895 @default.
• W2339330036 hasConcept C104317684 @default.
• W2339330036 hasConcept C11190779 @default.
• W2339330036 hasConcept C119599485 @default.
• W2339330036 hasConcept C127413603 @default.
• W2339330036 hasConcept C134146338 @default.
• W2339330036 hasConcept C165801399 @default.
• W2339330036 hasConcept C172385210 @default.
• W2339330036 hasConcept C184720557 @default.
• W2339330036 hasConcept C185592680 @default.
• W2339330036 hasConcept C195370968 @default.
• W2339330036 hasConcept C24326235 @default.
• W2339330036 hasConcept C2778413303 @default.
• W2339330036 hasConcept C41008148 @default.
• W2339330036 hasConcept C55493867 @default.
• W2339330036 hasConcept C63479239 @default.
• W2339330036 hasConceptScore W2339330036C104317684 @default.
• W2339330036 hasConceptScore W2339330036C11190779 @default.
• W2339330036 hasConceptScore W2339330036C119599485 @default.
• W2339330036 hasConceptScore W2339330036C127413603 @default.
• W2339330036 hasConceptScore W2339330036C134146338 @default.
• W2339330036 hasConceptScore W2339330036C165801399 @default.
• W2339330036 hasConceptScore W2339330036C172385210 @default.
• W2339330036 hasConceptScore W2339330036C184720557 @default.
• W2339330036 hasConceptScore W2339330036C185592680 @default.
• W2339330036 hasConceptScore W2339330036C195370968 @default.
• W2339330036 hasConceptScore W2339330036C24326235 @default.
• W2339330036 hasConceptScore W2339330036C2778413303 @default.
• W2339330036 hasConceptScore W2339330036C41008148 @default.
• W2339330036 hasConceptScore W2339330036C55493867 @default.
• W2339330036 hasConceptScore W2339330036C63479239 @default.
• W2339330036 hasIssue "2006" @default.
• W2339330036 hasLocation W23393300361 @default.
• W2339330036 hasOpenAccess W2339330036 @default.
• W2339330036 hasPrimaryLocation W23393300361 @default.
• W2339330036 hasRelatedWork W1608296848 @default.
• W2339330036 hasRelatedWork W1867748679 @default.
• W2339330036 hasRelatedWork W1969941001 @default.
• W2339330036 hasRelatedWork W1977864611 @default.
• W2339330036 hasRelatedWork W1999737677 @default.
• W2339330036 hasRelatedWork W2027642168 @default.
• W2339330036 hasRelatedWork W2029870742 @default.
• W2339330036 hasRelatedWork W2039259219 @default.
• W2339330036 hasRelatedWork W2039464945 @default.
• W2339330036 hasRelatedWork W21042683 @default.
• W2339330036 hasRelatedWork W2112768744 @default.
• W2339330036 hasRelatedWork W2113154362 @default.
• W2339330036 hasRelatedWork W2114575891 @default.
• W2339330036 hasRelatedWork W2133549956 @default.
• W2339330036 hasRelatedWork W2137412232 @default.
• W2339330036 hasRelatedWork W2533939383 @default.
• W2339330036 hasRelatedWork W2562694699 @default.
• W2339330036 hasRelatedWork W2933289877 @default.
• W2339330036 hasRelatedWork W3173279622 @default.
• W2339330036 hasRelatedWork W2929272115 @default.
• W2339330036 hasVolume "3" @default.
• W2339330036 isParatext "false" @default.
• W2339330036 isRetracted "false" @default.
• W2339330036 magId "2339330036" @default.
• W2339330036 workType "article" @default.