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- W23399072 abstract "A study was made of the interaction between interstitial atoms and vacancy defects formed in Si as a result of irradiation with large neutron doses. ''Annealing'' of the optical absorption associated with various vacancy complexes was observed. The activation energies of the annealing of the individual absorption bands in the wavelength range 4.5--14.5 m were calculated and it was found that such annealing was due to large multivacancy complexes. After irradiation with large neutron doses it was found that interstitial atoms participated actively in the formation and annealing of vacancy defects in disordered regions." @default.
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- W23399072 title "Characteristics of formation and annealing of defects in Si irradiated with large neutron doses" @default.
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