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- W2339937693 abstract "Abstract Texture and morphology evolution of modified Lanthanum Zirconium oxide (LaZr 1.1 O y ) films grown on biaxially textured Ni 5%W tapes by chemical solution deposition (CSD) method at different heat-treatment conditions has been investigated. Results show that both the growth orientation and surface morphology of films are dependent on the heating rate and annealing temperature during heat-treatment process. Compared with the annealing temperature, heating rate shows a greater influence on the orientation growth of CSD-LaZr 1.1 O y film. Slow heating rate is beneficial to a single (00 l ) orientation growth of LaZr 1.1 O y grains on textured Ni-5at.%W (Ni5W) substrate. However, the surface morphology analysis reveals a minor effect of heating rate on the grain size and surface roughness of LaZr 1.1 O y film. We consider that a slow heating rate would lead to the homogeneity nucleation of LaZr 1.1 O y grains and eventually forming the great textured film due to the narrow temperature interval of the complete decomposition for LaZr 1.1 O y precursor gel. In any case, high-quality LaZr 1.1 O y film has been achieved at annealing temperature of 900 °C with heating rate of 2 °C/min. Moreover, we have grown epitaxial CeO 2 film on the textured Ni5W substrate covered by LaZr 1.1 O y film using CSD approach. CeO 2 precursor solution was spin-coated on short sample of Ni5W/LZO and then heat-treated at 1000 °C for 30 min in Ar-4%H 2 . Detailed XRD and AFM studies indicate that CeO 2 film has sharp bi-axial texture and smooth surface. These results demonstrate that a low-cost CSD LaZr 1.1 O y film can act as a planarization template for the further production high J c YBCO-superconducting film." @default.
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- W2339937693 date "2016-10-01" @default.
- W2339937693 modified "2023-10-06" @default.
- W2339937693 title "Epitaxial growth of CSD modified lanthanum zirconium oxide buffer layer for coated conductors" @default.
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- W2339937693 doi "https://doi.org/10.1016/j.jallcom.2016.04.186" @default.
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