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- W2340391714 abstract "The presence of defective native copper‐oxide (Cu x O) remains a challenge for device technologies owing to its detrimental effects on the adhesion, moisture sensitivity and stress‐migration. Here we demonstrate a rapid, single‐step , and organic‐solvent‐free sol‐gel deposition process that is capable of simultaneously reducing the weak native Cu‐oxide while forming a densely connected Cu/hybrid interface. A marked 9‐fold improvement in adhesion is reported, along with a substantial decrease in the Cu stress‐migration rate during in‐situ isothermal stress‐relaxation experiments. The enhanced Cu/hybrid interface adhesion and the improved Cu stress‐migration performance were attributed to the partial reduction of the ~2 nm native Cu 2 O layer as demonstrated via atomic‐resolution transmission electron microscopy. The hybrid‐layer strategy we developed is expected to be effective in not only being a strong candidate for adhesion improvement to Cu, but in promoting Cu stress‐ and the related electro‐migration performance." @default.
- W2340391714 created "2016-06-24" @default.
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- W2340391714 date "2016-04-13" @default.
- W2340391714 modified "2023-10-07" @default.
- W2340391714 title "Organothiol-Based Hybrid-Layer Strategy for High-Performance Copper Adhesion and Stress-Migration via Simultaneous Oxide Reduction" @default.
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- W2340391714 doi "https://doi.org/10.1002/admi.201600118" @default.
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