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- W2340642271 abstract "A novel 1,3,4-oxadiazole-substituted benzo[b]triphenylene was synthesized by three-step synthetic procedure and OFET device design was successfully designed after theoretical calculations made using Gaussian software. For investigating the field-effect properties of designed organic electronic device, a SiO2 (300 nm) was thermally grown on p-Si wafer at 1000 °C as a dielectric layer and gate, source and drain contacts have been deposited using Au metal with physical vapour deposition. 1,3,4-Oxadiazole-substituted benzo[b]triphenylene was spin coated on the source and drain electrodes of our device, forming organic/inorganic interfaced field-effect transistors. Surface morphology and thin film properties were investigated using AFM. All electrical measurements were done in air ambient. The device showed a typical p-type channel behaviour with increasing negative gate bias voltage values. Our results have surprisingly shown that the saturation regime of this device has high mobility (μFET), excellent on/off ratio (Ion/Ioff), high transconductance (gm) and a small threshold voltage (VTh). The values of μFET, Ion/Ioff, gm and VTh were found as 5.02 cm2/Vs, 0.7 × 103, 5.64 μS/mm and 1.37 V, respectively. These values show that our novel organic material could be a potential candidate for organic electronic device applications in the future." @default.
- W2340642271 created "2016-06-24" @default.
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- W2340642271 date "2016-01-13" @default.
- W2340642271 modified "2023-10-18" @default.
- W2340642271 title "Organic/inorganic interfaced field-effect transistor properties with a novel organic semiconducting material" @default.
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- W2340642271 doi "https://doi.org/10.1080/14786435.2015.1130277" @default.
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