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- W2340803574 abstract "It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact." @default.
- W2340803574 created "2016-06-24" @default.
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- W2340803574 date "2014-01-01" @default.
- W2340803574 modified "2023-10-17" @default.
- W2340803574 title "OPTIMIZATION OF MANUFACTURE OF FIELD - EFFECT HETEROTRANSISTORS WITHOUT P-N- JUNCTIONS TO DECREASE THEIR DIMENSIONS" @default.
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