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- W2341358698 abstract "In this study, we developed the solution-processed PMMA-<TEX>$HfO_x$</TEX> hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-<TEX>$HfO_x$</TEX> hybrid ReRAM were compared to those of PMMA- and <TEX>$HfO_x$</TEX>-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-<TEX>$HfO_x$</TEX> hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and <TEX>$HfO_x$</TEX>-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the <TEX>$HfO_x$</TEX> into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-<TEX>$HfO_x$</TEX> hybrid ReRAM and <TEX>$HfO_x$</TEX>-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in <TEX>$HfO_x$</TEX> film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-<TEX>$HfO_x$</TEX> films showed an excellent flexibility without defect generation." @default.
- W2341358698 created "2016-06-24" @default.
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- W2341358698 date "2016-03-01" @default.
- W2341358698 modified "2023-09-25" @default.
- W2341358698 title "Fabrication of PMMA-HfO<sub>x</sub> Organic-Inorganic Hybrid Resistive Switching Memory" @default.
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- W2341358698 doi "https://doi.org/10.4313/jkem.2016.29.3.135" @default.
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