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• W2342111522 abstract "Abstract In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied." @default.
• W2342111522 created "2016-06-24" @default.
• W2342111522 creator A5029770267 @default.
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• W2342111522 date "2016-10-01" @default.
• W2342111522 modified "2023-10-17" @default.
• W2342111522 title "Optoelectrical, structural and morphological characterization of Cu2ZnSnSe4 compound used in photovoltaic applications" @default.
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• W2342111522 doi "https://doi.org/10.1016/j.apsusc.2016.04.073" @default.
• W2342111522 hasPublicationYear "2016" @default.
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