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- W2343494512 endingPage "063001" @default.
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- W2343494512 abstract "Abstract A possible low-temperature fabrication process of a gate-stack for Ge-based spin metal–oxide–semiconductor field-effect transistor (MOSFET) is investigated. First, since we use epitaxial ferromagnetic Heusler alloys on top of the phosphorous doped Ge epilayer as spin injector and detector, we need a dry etching process to form Heusler-alloy/n + -Ge Schottky-tunnel contacts. Next, to remove the Ge epilayers damaged by the dry etching process, the fabricated structures are dipped in a 0.03% diluted H 2 O 2 solution. Finally, Al/SiO 2 /GeO 2 /Ge gate-stack structures are fabricated at 300 °C as a top gate-stack structure. As a result, the currents in the Ge-MOSFET fabricated here can be modulated by applying gate voltages even by using the low-temperature formed gate-stack structures. This low-temperature fabrication process can be utilized for operating Ge spin MOSFETs with a top gate electrode." @default.
- W2343494512 created "2016-06-24" @default.
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- W2343494512 date "2016-04-28" @default.
- W2343494512 modified "2023-10-16" @default.
- W2343494512 title "A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes" @default.
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- W2343494512 doi "https://doi.org/10.7567/jjap.55.063001" @default.
- W2343494512 hasPublicationYear "2016" @default.
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