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- W2343966232 abstract "Optical performances of blue InGaN light-emitting diodes (LEDs) with an undoped AlGaN electron-blocking layer (U-AlGaN EBL) embedded in the active region are investigated numerically. As a benefit of this special structural design, the electrons would spill over the EBL and recombine with the holes in the wells close to the p-side. Moreover, holes in the wells that are close to the n-side increase to a higher concentration due to the presence of a new shallow potential well in the valence band. The simulation results indicate that the LEDs with U-AlGaN EBL has higher internal quantum efficiency as well as light output power compared with the conventional single p-type AlGaN EBL structure. These improvements are primarily contributed to the enhancement on electrons confinement and holes injection." @default.
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- W2343966232 date "2016-06-01" @default.
- W2343966232 modified "2023-09-24" @default.
- W2343966232 title "Performance Enhancement of Blue Light-Emitting Diodes With an Undoped AlGaN Electron-Blocking Layer in the Active Region" @default.
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- W2343966232 doi "https://doi.org/10.1109/jdt.2015.2509001" @default.
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