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• W2344032160 abstract "We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications." @default.
• W2344032160 created "2016-06-24" @default.
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• W2344032160 date "2016-04-25" @default.
• W2344032160 modified "2023-10-12" @default.
• W2344032160 title "High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate" @default.
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• W2344032160 doi "https://doi.org/10.1063/1.4948251" @default.
• W2344032160 hasPublicationYear "2016" @default.
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