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- W2344331906 abstract "In this paper a SiGe p+n+in+ tunneling transistor is studied and compared with Si and Ge based transistors. Moreover, in the proposed structure a -doped n+ region is considered between the source and the channel, and this region is optimized in the sense of region width (Wd) and doping level for the highest ratio of on-current to off-current and the lowest sub-threshold swing. Simulations show that Ion/Ioff ratio greater than 11 order of magnitude and sub-threshold swing of 16.6 mv/dec, which is well below 60 mv/dec limit of conventional MOSFETs, are obtained." @default.
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- W2344331906 date "2014-10-04" @default.
- W2344331906 modified "2023-09-23" @default.
- W2344331906 title "Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs" @default.
- W2344331906 doi "https://doi.org/10.22067/ess.v2i1.31860" @default.
- W2344331906 hasPublicationYear "2014" @default.
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