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- W2345264742 abstract "We demonstrate low-temperature growth of all-epitaxial Co2FeSi/Ge/Co2FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co2FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co2FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a TG of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co2FeSi/Ge/Co2FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices." @default.
- W2345264742 created "2016-06-24" @default.
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- W2345264742 date "2016-01-27" @default.
- W2345264742 modified "2023-09-26" @default.
- W2345264742 title "All-epitaxial Co2FeSi/Ge/Co2FeSi trilayers fabricated by Sn-induced low-temperature epitaxy" @default.
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- W2345264742 doi "https://doi.org/10.1063/1.4940702" @default.
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