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• W2347630075 abstract "Based on the charge control theory,a accurate analytical model of I-V characteristics for AlGaN/GaN high electron mobility transistor(HEMT) is presented considering the relationship between self-heating effect and polarization,electron mobility,velocity saturation,conduction band discontinuity,doping concentration,channel temperature.The effect of parasitic resistances is also considered.The comparison between simulations and physical calculation shows a good agreement.The model is simple in calculations,suitable for design of microwave device and circuit." @default.
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• W2347630075 date "2010-01-01" @default.
• W2347630075 modified "2023-09-24" @default.
• W2347630075 title "Model and Simulation for AlGaN/GaN HEMT including Self-heating Effect" @default.
• W2347630075 hasPublicationYear "2010" @default.
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