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- W2348315699 abstract "The dislocation density of three kinds of SIMOX samples was obtained by Secco etching.The contamination of heavy metal impurity (Fe,Cu,Ni,Mo)was measured using UVF technology for these samples before and after SIOMX/CMOS processing.It's mechanism is analyzed briefly by source?drain leakage characteristics of SIMOX/MOS device.The results show that heavy metal impurity contamination not only occurred during implantation forming SOI structure but also in the course of IC processing and had a big influence on the MOSFET property.The degree of contamination during IC processing related closely to the dislocation density of SIMOX structure.The dislocation density could be the absorption center of the atom of heavy metal impurity.To decrease the contamination of heavy metal impurity the dislocation density of SIMOX material should be decreased first." @default.
- W2348315699 created "2016-06-24" @default.
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- W2348315699 date "2001-01-01" @default.
- W2348315699 modified "2023-09-25" @default.
- W2348315699 title "A Study on Contamination of Heavy Metal Impurity to SIMOX wafer" @default.
- W2348315699 hasPublicationYear "2001" @default.
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