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- W2348454190 abstract "The regular perturbation method was employed to study the subthreshold characteristic of nano-scaled MOSFETs.By solving the Poisson equation with the regular perturbation method,the depletion approximation and charge-sheet model in the equation were avoided which are invalid in nano-scaled MOSFETs.This yielded a conventional exponential form of the subthreshold current,and the subthreshold swing was obtained analytically from this current equation.The validity of our model was verified by comparing ours with the results from the 2D device simulator Medici." @default.
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- W2348454190 date "2007-01-01" @default.
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- W2348454190 title "A new method for studying the subthreshold characteristics of nano-scaled MOSFETs" @default.
- W2348454190 hasPublicationYear "2007" @default.
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