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- W2348929996 abstract "An ultra high vacuum chemical vapor deposition system (UHV/CVD) was designed and fabricated to grow strained Si 1- x Ge x material for high performance device applications. The investigation of Si 1- x Ge x /Si hetero epitaxy process was carried out on the laboratory making system. The rule that the growth rate of Si 1- x Ge x and the fraction of germanium are varied with the flow of GeH 4 was researched. The experiment shows that the growth rate of Si 1-x Ge x increases distinctively with the flow of GeH 4 and the fraction ratio of Ge to Si in the epitaxial layer is about 2.5 times to the concentration ratio of GeH 4 to SiH 4 in gas phase. A simple reaction kinetic model was proposed to explain the relation between the fraction x and flow rate. The Raman spectroscopy analyses manifest that the epitaxial layer is completely strained. The diodes fabricated from this material show nearly ideal performance." @default.
- W2348929996 created "2016-06-24" @default.
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- W2348929996 date "1999-01-01" @default.
- W2348929996 modified "2023-09-23" @default.
- W2348929996 title "Study of Si 1- x Ge x /Si epitaxy by ultra high vacuum chemical vapor deposition process" @default.
- W2348929996 hasPublicationYear "1999" @default.
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