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- W2349143312 abstract "P-Si films have been obtained by excimer laser annealing at room temperature. The films are characterized and analyzed by XRD, SEM. The energy density of crystallization was calculated and the mechanism of annealing was discussed. The result shows that the energy density of threshold for crystallization have no relation with the thickness of the films, and the grain sizes become larger when the laser energy density is higher." @default.
- W2349143312 created "2016-06-24" @default.
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- W2349143312 date "2000-01-01" @default.
- W2349143312 modified "2023-09-23" @default.
- W2349143312 title "Study of p-Si Film Obtained at Low Temperatures by Excimer Laser Annealing" @default.
- W2349143312 hasPublicationYear "2000" @default.
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