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- W2349851630 abstract "Background: Zinc oxide has an extensive applied prospect on photoelectric devices, like light-emitting diodes and solar cells, due to its 3.37 e V optical band gap and 60 me V excition binding energy. Recently, doping Zn O with metal elements has become a popular research topic because of the dramatic improvement on photoelectricity, piezoelectric property and conductivity. Comparing with other elements, Ag is appropriate to act as acceptor dopant element because it has a shallow acceptor level in Zn O. Therefore, many coupling systems of Zn O-Ag nanostructures have been researched. Purpose: Various methods of incorporating Ag and Zn O have been researched but it is hard to control the uniformity of doped Ag in Zn O. The quality of Zn O thin films is also one of the key factors affecting the property of samples. This paper mainly focused on how to prepare high-quality Zn O thin films by magnetron sputtering technique and how to improve the photoluminescence property of Zn O via controlling the uniformity of Ag dopant. Methods: High-quality Zn O thin films were deposited on Al2O3 substrates by magnetron sputtering technique with combination of subsequent thermal annealing. The films were then implanted with Ag ions at different energies and fluences. We discussed the structural and photoluminescence properties of implanted Zn O thin film by means of grazing incidence X-ray diffraction(GIXRD), photoluminescence(PL), UV-vis and scanning electron microscope(SEM). Results: The PL of prepared samples showed that two bands at 380 nm and 610 nm were observed for pure Zn O films and two new peaks at 400 nm and 430 nm appeared for the implanted Zn O. Ag ion implantation strongly enhanced the excition peak of Zn O and quenched the PL peak from oxygen defect of Zn O. However, the PL bands of implanted Zn O films at 400 nm and 430 nm have been quenched after thermal annealing at nitrogen atmosphere. Conclusion: In summary, Ag nanoparticles were formed in Zn O thin films after Ag ion implantation. Thus the surface plasma resonance absorption peak from Ag nanoparticles was observed. Furthermore, the formed Ag nanoparticles quenched the oxygen defect and enhanced the excition peak of Zn O. The existence of AgZn and Agi energy levels and synthesis of Ag nanoparticles made a great improvement on the PL property of Zn O." @default.
- W2349851630 created "2016-06-24" @default.
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- W2349851630 date "2015-01-01" @default.
- W2349851630 modified "2023-09-25" @default.
- W2349851630 title "Effect on ZnO thin film photoluminescence after Ag ion implantation" @default.
- W2349851630 hasPublicationYear "2015" @default.
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