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- W2350412709 abstract "For the purpose of reducing the p Si TFT off state current, the structures of lightly doped drain (LDD) were used. Applying a homojunction model of semiconductor theory and considering the off state current modified by hot carrier effect, the static characteristics of LDD p Si TFT were simulated. The on/off current switching ratios of p Si TFT were investigated by a series of LDD doping concentrations and lengths.The LDD structures reduce TFT′s off state current to 10 -11 A and increase the on/off current switching ratios of p Si TFT to 10 6. The results will be valuable referencepoints for designing and fabricating of p Si TFT." @default.
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- W2350412709 date "2001-01-01" @default.
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- W2350412709 title "Simulation of Static-Characteristics of Lightly-doped-drain Polysilicon Thin Film Transistors" @default.
- W2350412709 hasPublicationYear "2001" @default.
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