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- W2350712701 abstract "Device structure characterization and its physical effect has been analyzed for the 0.35μm BiCMOS process.Then,the corresponding theory models,and the test bench and methodology for the transistor devices have been determined.As a result,the device test structure and model verifying circuit has been designed,with the test data,parameters extraction has been finished,finally the accurate SPICE models for the transistors have been built." @default.
- W2350712701 created "2016-06-24" @default.
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- W2350712701 date "2009-01-01" @default.
- W2350712701 modified "2023-09-23" @default.
- W2350712701 title "Device Modeling for 0.35μm BiCMOS Technology" @default.
- W2350712701 hasPublicationYear "2009" @default.
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