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- W2351097481 abstract "This paper proposed a novel device of FLASH and introduced its manufacturing processing. Following the processing simulation, device simulation completed the writing operation based on Hot Electron Injection(HEI) and the erasing operation with F N tunneling effect. The program times were determined by variation of charge quantity on float gate with time to satisfy threshold voltage window. A current model with theory equation was established to analyze the relationship between substrate current and variation of threshold voltage with constant electrical field in ultra thin SiO 2 during the writing progress. In this case substate current can reflect variation of threshhold voltage." @default.
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- W2351097481 date "1999-01-01" @default.
- W2351097481 modified "2023-09-23" @default.
- W2351097481 title "Structure and function research on FLASH memory" @default.
- W2351097481 hasPublicationYear "1999" @default.
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