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- W2352000176 abstract "The growth and characteristics of c arbon -doped p -type InGaAs lattice matched to InP by gas source molecular beam epitaxy(GSMBE)were studied,using carbon tetrabro mide(CBr 4 )as a doping source.Under AsH 3 supply pressure 5.33×10 4 Pa and growth temperature 500℃,ultr ahigh carbon -doped p -type InGaAs epi -lay er with hole concentration of 1×10 20 /cm 3 and room tempera -ture mobility of 45cm 2 /Vs are achieved.The effects of CBr 4 supply pressure,AsH 3 supply pressure and growth temperature on the composition,hole concentration and mobility of carbon -doped InGaAs epi -layers were investigated.The d ependence of hydrogen passivation e ffect on the growth condition was also studied." @default.
- W2352000176 created "2016-06-24" @default.
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- W2352000176 date "2004-01-01" @default.
- W2352000176 modified "2023-10-16" @default.
- W2352000176 title "Study on ultrahigh carbon -doped p -t ype InGaAs grown by gas source molecular beam epitaxy" @default.
- W2352000176 hasPublicationYear "2004" @default.
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