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• W2352670004 endingPage "064201" @default.
• W2352670004 startingPage "064201" @default.
• W2352670004 abstract "Abstract In this study, a structure of Pt/Cu 18 Si 12 O 70 /TiN has been investigated. By co-sputtering the Cu and SiO 2 targets in the switching layer, we can measure the operation mechanism of complementary resistive switching (CRS). This differs from conventional conductive bridge random access memory (CBRAM) that tends to use Cu electrodes rather than Cu 18 Si 12 O 70 . By changing the voltage and compliance current, we can control device operating characteristics. Because Cu distributes differently in the device depending on this setting, the operating end can be located at either the top or bottom electrode. Device current–voltage ( I – V ) curves are used to demonstrate that the CRS in the CBRAM device is a double-electrode operation." @default.
• W2352670004 created "2016-06-24" @default.
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• W2352670004 date "2016-05-11" @default.
• W2352670004 modified "2023-10-14" @default.
• W2352670004 title "Complementary resistive switching behavior for conductive bridge random access memory" @default.
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• W2352670004 doi "https://doi.org/10.7567/apex.9.064201" @default.
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